tsm 20n50cn 500v n-channel power mosfet 1/8 version: a12 to - 3p n product summary v ds (v) r ds(on) (m ? ) i d (a) 500 0.3 @ v gs =10v 20 general description the TSM20N50CN n-channel enhancement mode power mos fet is produced by planar stripe dmos technology. this advanced technology has been espec ially tailored to minimize on-state resistance, pro vide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency s witch mode power supply, electronic lamp ballast ba sed on half bridge. features low r ds(on) 0.3 ? (max.) low gate charge typical @ 54nc (typ.) improve dv/dt capability block diagram n-channel mosfet ordering information part no. package packing TSM20N50CN c0 to-3pn 30pcs / tube absolute maximum rating (ta = 25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 v continuous drain current(t c =25 ) i d 20 a pulsed drain current * i dm 80 a peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns single pulse avalanche energy (note 2) e as 1088 mj avalanche current (repetitive) (note 1) i ar 20 a repetitive avalanche energy (note 1) e ar 31.2 mj operating junction temperature t j 150 oc storage temperature range t stg -55 to +150 o c * limited by maximum junction temperature pin definition : 1. gate 2. drain 3. source free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 2/8 version: a12 thermal performance parameter symbol limit unit thermal resistance - junction to case r ? jc 0.4 o c/w thermal resistance - junction to ambient r ? ja 62.5 o c/w notes: surface mounted on fr4 board t 10sec electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = 250ua bv dss 500 -- -- v drain-source on-state resistance v gs = 10v, i d = 10a r ds(on) -- 0.25 0.3 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0 v zero gate voltage drain current v ds = 500v, v gs = 0v i dss -- -- 1 ua gate body leakage v gs = 30v, v ds = 0v i gss -- -- 100 na forward transconductance v ds = 30v, i d = 10a g fs -- 11 -- s diode forward voltage i s = 20a, v gs = 0v v sd -- -- 1.5 v dynamic b total gate charge v ds = 400v, i d = 20a, v gs = 10v q g -- 54 -- nc gate-source charge q gs -- 15 -- gate-drain charge q gd -- 12.5 -- input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz c iss -- 3094 -- pf output capacitance c oss -- 296 -- reverse transfer capacitance c rss -- 9.2 -- switching c turn-on delay time v dd = 250v, i d = 20a, r g = 25 ? t d(on) -- 78 -- ns turn-on rise time t r -- 72 -- turn-off delay time t d(off) -- 184 -- turn-off fall time t f -- 68 -- reverse recovery time v gs = 0v, i s = 20a, di f /dt = 100a/us t fr -- 426 -- ns reverse recovery charge q fr -- 6 -- uc notes: 1. repetitive rating: pulse width limited by maximu m junction temperature 2. v dd = 50v, i as =20a, l=4.9mh, r g =25 ? , starting t j =25 3. i sd 20a, di/dt 200a/us, vdd bv ds , starting t j =25 4. pulse test: pulse width 300us, duty cycle 2% 5. b for design reference only, not subject to prod uction testing. 6. c switching time is essentially independent of o perating temperature. free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 3/8 version: a12 electrical characteristics curve (tc = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 4/8 version: a12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) drain current vs. case temperature bv dss vs. junction temperature maximum safe operating area capacitance vs. drain-source voltage normalized thermal transient impedance, junction-to -ambient free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 5/8 version: a12 gate charge test circuit & waveform resistive switching test circuit & waveform e as test circuit & waveform free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 6/8 version: a12 diode reverse recovery time test circuit & waveform free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 7/8 version: a12 to-3pn mechanical drawing unit: millimeters free datasheet http://www.datasheetlist.com/
tsm 20n50cn 500v n-channel power mosfet 8/8 version: a12 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale. free datasheet http://www.datasheetlist.com/
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